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EFA120D
UPDATED 09/05/2006
Low Distortion GaAs Power FET
FEATURES
* * * * * * +28.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 1200 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 30mA PER BIN RANGE
Chip Thickness: 75 20 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V,Ids=3.4mA Igd=1.2mA Igs=1.2mA
Caution! ESD sensitive device. MIN 26.0 18.0 TYP 28.0 28.0 19.5 14.5 45 220 140 340 180 -2.0 -13 -7 -15 -14 40 45
o
MAX
UNIT dBm dB %
440
mA mS
-3.5
V V V C/W
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt
Note:
PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
ABSOLUTE1 12V -5V 5.4 mA 0.9 mA 25 dBm 175oC -65/175oC 3.3 W
CONTINUOUS2 8V -4V 1.8 mA 0.3 mA @ 3dB Compression 175oC -65/175oC 3.3 W
1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised September 2006
EFA120D
UPDATED 09/05/2006
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
Freq GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Note:
S11 Mag 0.918 0.878 0.858 0.852 0.849 0.849 0.846 0.848 0.848 0.851 0.859 0.860 0.865 0.870 0.869 0.877 0.878 0.876 0.881 0.882 0.872 0.875 0.876 0.878 0.876 0.878 Ang -74.7 -117.1 -141.0 -156.5 -167.9 -176.5 176.6 170.3 164.8 159.9 154.9 151.1 147.4 144.0 140.7 137.8 134.8 131.7 128.4 124.6 116.8 113.1 110.2 107.5 105.0 103.0 Mag 9.820 6.762 4.898 3.781 3.041 2.558 2.200 1.925 1.720 1.538 1.392 1.261 1.149 1.053 0.962 0.893 0.823 0.766 0.719 0.671 0.662 0.618 0.574 0.524 0.482 0.442
S21 Ang 134.4 108.7 92.3 80.0 69.8 60.8 52.9 45.2 37.9 31.0 23.9 17.5 11.3 5.3 -0.6 -6.1 -11.1 -16.2 -21.4 -26.2 -33.0 -37.8 -41.6 -45.6 -48.6 -51.6
S12 Mag 0.031 0.043 0.046 0.047 0.046 0.047 0.049 0.049 0.049 0.052 0.054 0.056 0.061 0.065 0.068 0.073 0.079 0.085 0.093 0.103 0.116 0.124 0.132 0.141 0.150 0.163
S22 Ang 52.7 33.4 27.4 23.7 21.4 22.4 24.8 23.7 26.5 28.2 30.5 32.3 30.9 33.5 32.0 33.3 32.4 32.2 31.5 30.0 25.9 24.2 22.4 21.3 20.4 17.3 Mag 0.290 0.240 0.223 0.226 0.243 0.261 0.282 0.306 0.331 0.354 0.383 0.416 0.449 0.480 0.511 0.538 0.564 0.586 0.599 0.611 0.605 0.626 0.637 0.662 0.701 0.714 Ang -41.9 -68.5 -84.0 -96.2 -106.1 -111.3 -117.3 -123.0 -128.9 -134.1 -140.2 -145.8 -151.0 -155.5 -159.8 -163.7 -167.5 -171.0 -174.8 -178.6 176.8 172.2 166.9 161.9 156.7 151.8
The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 2 drain wires, 12 mils each; 4 source wires, 7 mils each.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised September 2006

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